By Edwin W. Greeneich (auth.)
Analog built-in Circuits bargains with the layout and research of modem analog circuits utilizing built-in bipolar and field-effect transistor applied sciences. This e-book is appropriate as a textual content for a one-semester path for senior point or first-year graduate scholars in addition to a reference paintings for working towards engin eers. complex scholars also will locate the textual content beneficial in that the various fabric provided here's now not coated in lots of first classes on analog circuits. incorporated during this is an in depth insurance of suggestions amplifiers, current-mode circuits, and translinear circuits. appropriate history will be primary classes in digital circuits and semiconductor units. This e-book includes various examples, lots of which come with advertisement analog circuits. End-of-chapter difficulties are given, many illustrating useful circuits. bankruptcy 1 discuses the versions regular to symbolize units utilized in modem analog built-in circuits. provided are types for bipolar junction transistors, junction diodes, junction field-effect transistors, and metal-oxide semiconductor field-effect transistors. either large-signal and small-signal types are built in addition to their implementation within the SPICE circuit simulation application. the fundamental development blocks utilized in a wide number of analog circuits are analyzed in bankruptcy 2; those encompass present resources, dc level-shift phases, single-transistor achieve levels, two-transistor achieve phases, and output levels. either bipolar and field-effect transistor implementations are provided. bankruptcy three offers with operational amplifier circuits. The 4 easy op-amp circuits are analyzed: (1) voltage-feedback amplifiers, (2) current-feedback amplifiers, (3) current-differencing amplifiers, and (4) transconductance ampli fiers. chosen functions also are presented.
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P is the Fermi potential of the semiconductor, given by kT (NA) <\>p=-ln q (1-77) ni With VGS > VTH, a conducting channel exists and the drain current ID increases with increasing drain voltage VDS • As VDS is increased, the potential in the channel increases, being largest at the drain end of the channel. When VDS = V GS - VTH , the voltage across the gate oxide at the drain (VGD = VGS - VDS ) is no longer large enough to create the n-type inversion layer and the channel is pinched off at that point.
For each ot the two configurations sketch the I-V characteristic for V>O. 14. and equal to V DS at the drain end (x = L). The channel potential as a function of position is related to ID and Q~H as dV= ID WlLnQ~H(X) dx The total charge stored in the channel is LL Q~H (x) dx QCH = W Using C~S = dQcH dVGS show that the gate-to-source capacitance in saturation given in Eq. (1-84) results. Hint: In saturation, take V DS = VGS - VTH and use Eq. (1-79) for I D• References I. L. Moll, "Large-Signal Behavior of Junction Transistors," Proc.
1-67) and (1-68) from minus to plus. Small-Signal Model of the JFET Figure 1-28 shows the small-signal equivalent circuit for a JFET operating either in the triode or saturation region. The transconductance is found from Eqs. (1-61) and (1-64): dId 12~tS VDS I gm= dVgs v,,=o = 2IDss ( VGS) - - - 1 - - - (1 Vp Vp for V DS < VGS - Vp + x. V DS ) for V DS 2:: V GS - Vp (1-69) The small-signal output resistance is determined using Eqs. (1-61) and (1-64): (1-70) 32 Chapter 1 - Models for Integrated-Circuit Devices i 9 -.